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MS1006 - RF AND MICROWAVE TRANSISTORS

General Description

The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Key Features

  • Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain.

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Datasheet Details

Part number MS1006
Manufacturer Advanced Power Technology
File Size 125.77 KB
Description RF AND MICROWAVE TRANSISTORS
Datasheet download datasheet MS1006 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1006 www.datasheet4u.com RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.