Advanced Power Technology MS1006
The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.| Part No. | MS1006 |
|---|---|
| Datasheet | MS1006 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF AND MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● Optimized for SSB 30 MHz 50 Volts Common Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain
DESCRIPTION
:ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 2.0 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. MS1006ELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCES BVCEO BVEBO hFE IC = 100 mA IC = 200 mA IE = 10 mA VCE = 6 V VBE = 0 V IB = 0 mA IC = 0 mA IC = 1.4 A 110 55 4.0 19 V V V 50 DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP * IMD *...
