Datasheet Details
| Part number | MS1006 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 125.77 KB |
| Description | RF AND MICROWAVE TRANSISTORS |
| Datasheet | MS1006_AdvancedPowerTechnology.pdf |
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Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1006 ..
| Part number | MS1006 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 125.77 KB |
| Description | RF AND MICROWAVE TRANSISTORS |
| Datasheet | MS1006_AdvancedPowerTechnology.pdf |
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: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF munications.
This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 3.25 127 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 2.0 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MS1006 | 10 AMP SCHOTTKY BARRIER RECTIFIER | Microsemi Corporation |
| Part Number | Description |
|---|---|
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1003 | RF & MICROWAVE TRANSISTORS |
| MS1007 | RF & MICROWAVE TRANSISTORS |
| MS1008 | RF & MICROWAVE TRANSISTORS |
| MS1011 | RF AND MICROWAVE TRANSISTORS |
| MS1051 | RF & MICROWAVE TRANSISTORS |
| MS1076 | RF & MICROWAVE TRANSISTORS |
| MS1079 | RF & MICROWAVE TRANSISTORS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |