MS1006 Description
The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF munications. This device utilizes emitter ballasting for improved ruggedness and reliability. RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage...
MS1006 Key Features
- Optimized for SSB 30 MHz 50 Volts mon Emitter Gold Metallization POUT = 75 W Min. GP = 14 dB Gain