MS1079 - RF & MICROWAVE TRANSISTORS

Advanced Power Technology

General Description

The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Key Features

30 MHz 50 VOLTS POUT = 220 W GP = 13 dB.

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MS1079 rf & microwave transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	MS1079
Manufacturer	Advanced Power Technology
File Size	288.53 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	MS1079 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS1079 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 110 55 4.0 12 320 +200 -65 to +150 Unit V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.7 °C/W 053-7052 Rev - 10-2002 MS1079 www.datasheet4u.