MS1454 Description
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS Total Power Dissipation IC Collector Current Tj Junction Temperature Tstg Storage Temperature Value 48...
MS1454 Key Features
- Gold Metallization
- Diffused Emitter Ballasting
- Internal Input Matching
- Designed for Linear Operation
- High Saturated Power Capability
- mon Emitter Configuration
- Efficiency 55% (Typ)
- 20:1 VSWR
- Overdrive Survivability 5 dB