Datasheet4U Logo Datasheet4U.com

MS1454 Datasheet RF & MICROWAVE TRANSISTORS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number MS1454
Manufacturer Advanced Power Technology
File Size 275.89 KB
Description RF & MICROWAVE TRANSISTORS
Download MS1454 Download (PDF)

General Description

: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS Total Power Dissipation IC Collector Current Tj Junction Temperature Tstg Storage Temperature Value 48 25 3.5 88 7.5 +200 -65 to +150 THERMAL DATA RTH(j-c) Ju

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS.

Key Features

  • Gold Metallization.
  • Diffused Emitter Ballasting.
  • Internal Input Matching.
  • Designed for Linear Operation.
  • High Saturated Power Capability.
  • Common Emitter Configuration.
  • POUT.
  • Gain 30 W MIN 7.5 dB.
  • Efficiency 55% (Typ).
  • 20:1 VSWR.
  • Overdrive Survivability 5 dB.