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2N5070
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2.0 to 75 MHz Range.
FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package
MAXIMUM RATINGS
3.3 A IC 10 A (PEAK)
VCE PDISS TSTG θJC
30 V 70 W @ TC = 25 OC -65 OC to +200 OC
2.5 OC/W
PACKAGE STYLE TO- 60
1 = EMITTER
2 = BASE
3 = COLLECTOR CASE = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCER
IC = 200 mA RBE = 5.0 Ω
ICEO
VCE = 30 V
ICEV VCE = 60 V VBE = -1.5 V VCE = 60 V VBE = -1.5 V
TC = 150 OC
ICBO
VCB = 60 V
IEBO
VEB = 4.0 V
hFE
VCE = 5.0 V IC = 1.0 A IC = 3.0 A
MINIMUM TYPICAL MAXIMUM
30 40
5.
2N5070 Datasheet
