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2N918 - NPN SILICON HIGH FREQUENCY TRANSISTOR

General Description

The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.

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Datasheet Details

Part number 2N918
Manufacturer Advanced Semiconductor
File Size 14.98 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet 2N918 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCE PDISS TJ TSTG 15 V 300 mW @ TC = 25 OC 200 mW @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC PACKAGE STYLE TO-72 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 3.0 mA BVCBO ICBO BVEBO IC = 1.0 µA VCB = 15 V VCB = 15 V IE = 10 µA TA = 150 OC hFE VCE = 1.0 V IC = 3.0 mA VCE(SAT) IC = 10 mA IB = 1.0 mA VBE(SAT) IC = 10 mA IB = 1.0 mA NONE MINIMUM TYPICAL MAXIMUM 15 30 0.01 1.0 3.0 20 0.4 1.0 UNITS V V µA V --V V ft VCE = 10 V IC = 4.0 mA Cob VCB = 0 V VCB = 10 V Cib VEB = 0.