Datasheet4U Logo Datasheet4U.com

VFT300-28 Datasheet - Advanced Semiconductor

VHF POWER MOSFET Silicon N-Channel Enhancement Mode

VFT300-28 Features

* PG = 14 dB Typical at 175 MHz

* η D = 55% Typ. at POUT = 300 Watts

* Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O 16 A 65 V 65 V ± 40 V 30

VFT300-28 Datasheet (24.55 KB)

Preview of VFT300-28 PDF

Datasheet Details

Part number:

VFT300-28

Manufacturer:

Advanced Semiconductor

File Size:

24.55 KB

Description:

Vhf power mosfet silicon n-channel enhancement mode.

📁 Related Datasheet

VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

VFT30-28 VHF POWER MOSFET (Advanced Semiconductor)

VFT30-50 VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

VFT3045BP Trench MOS Barrier Schottky Rectifier (Vishay)

VFT3045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

VFT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)

VFT3060C Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode Advanced Semiconductor

Image Gallery

VFT300-28 Datasheet Preview Page 2

VFT300-28 Distributor