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VHB80-12 Datasheet

NPN SILICON RF POWER TRANSISTOR

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VHB80-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB80-12 is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO
36 V
VCEO
16 V
VCES
36 V
VEBO
4.0 V
PDISS
TJ
TSTG
θJC
270 W
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
PACKAGE STYLE .500 6L FLG
CA
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
BE
.725/18,42
GF
H
MINIMUM
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10718
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICES VCE = 12.5 V
hFE VCE = 5.0 V
IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
15
10 ---
UNITS
V
V
V
V
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
380 pF
PG
VCC =12.5 V
POUT = 80 W
ηC
f = 175 MHz
7.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number VHB80-12
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
Total Page 1 Pages
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