20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-r.

Pin Description ( SOT-323 ) AFN1304E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20.

AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN1304

AFN1306

AFN1330KS

AFN1330S

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

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AFN1032E

AFN1034