AFN1304E Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1304E Features

* 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-323 package design Application Net Working System Drivers: Relays,

AFN1304E General Description

AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN1304E Datasheet (593.20 KB)

AFN1304E Datasheet Preview — Preview of AFN1304E PDF

Datasheet Details

Part number:

AFN1304E

Manufacturer:

Alfa-MOS

File Size:

593.20 KB

Description:

N-channel enhancement mode mosfet.

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AFN1304E N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1304E Features

AFN1304E General Description

Datasheet Details

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