AFN1330KS - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1330KS, a member of the AFN1330KS-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN1330KS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.3A , R DS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 2KV ) Diode design.
in SOT-323 package design.

Alfa-MOS

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Datasheet Details

Part number	AFN1330KS
Manufacturer	Alfa-MOS
File Size	606.82 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN1330KS Datasheet
Additional preview pages of the AFN1330KS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN1330KS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1330KS 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.3A , R DS(ON)=3.0Ω@VGS=4.

Published: Dec 11, 2018 |