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AFN1306 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1306, a member of the AFN1306-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design.

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Datasheet Details

Part number AFN1306
Manufacturer Alfa-MOS
File Size 798.46 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1306 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1306 30V N-Channel Enhancement Mode MOSFET Features 30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.
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