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AFN1304E - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1304E, a member of the AFN1304E-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-323 package design.

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Datasheet preview – AFN1304E

Datasheet Details

Part number AFN1304E
Manufacturer Alfa-MOS
File Size 593.20 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1304E Datasheet
Additional preview pages of the AFN1304E datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN1304E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1304E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=400mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=500mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=680mΩ@VGS=1.
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