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AFN1330S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-323 ) AFN1330S 60V N-Channel Enhancement Mode MOSFET

Key Features

  • 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design.
  • in SOT-323 package design.

More Datasheets from Alfa-MOS

Part Number Description
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AFN1010S N-Channel Enhancement Mode MOSFET
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET
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AFN1026S N-Channel MOSFET

AFN1330S Distributor