Datasheet4U Logo Datasheet4U.com

AFN1330S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1330S, a member of the AFN1330S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design.
  • in SOT-323 package design.

📥 Download Datasheet

Datasheet preview – AFN1330S

Datasheet Details

Part number AFN1330S
Manufacturer Alfa-MOS
File Size 269.44 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1330S Datasheet
Additional preview pages of the AFN1330S datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS
  • AFN1330KS - N-Channel Enhancement Mode MOSFET
  • AFN1304 - N-Channel Enhancement Mode MOSFET
  • AFN1304E - N-Channel Enhancement Mode MOSFET
  • AFN1306 - N-Channel Enhancement Mode MOSFET
  • AFN1010S - N-Channel Enhancement Mode MOSFET
  • AFN1012 - N-Channel MOSFET
  • AFN1012E - N-Channel MOSFET
  • AFN1024 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1330S 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.
Published: |