Datasheet4U Logo Datasheet4U.com

AFN1306 Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1306 Features

* 30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Net Working System Drivers: Relays, Solenoids, Lam

AFN1306 General Description

AFN1306, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN1306 Datasheet (798.46 KB)

Preview of AFN1306 PDF

Datasheet Details

Part number:

AFN1306

Manufacturer:

Alfa-MOS

File Size:

798.46 KB

Description:

N-channel enhancement mode mosfet.

📁 Related Datasheet

AFN1304 N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN1304E N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN1330KS N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN1330S N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN1010S N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN1012 N-Channel MOSFET (Alfa-MOS)

AFN1012E N-Channel MOSFET (Alfa-MOS)

AFN1024 N-Channel MOSFET (Alfa-MOS)

AFN1024E N-Channel MOSFET (Alfa-MOS)

AFN1026S N-Channel MOSFET (Alfa-MOS)

TAGS

AFN1306 N-Channel Enhancement Mode MOSFET Alfa-MOS

Image Gallery

AFN1306 Datasheet Preview Page 2 AFN1306 Datasheet Preview Page 3

AFN1306 Distributor