60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.

Pin Description ( SOT-323 ) AFN1330S 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60.

AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

AFN1330KS

AFN1304

AFN1304E

AFN1306

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034