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AFN1330S - N-Channel Enhancement Mode MOSFET

Download the AFN1330S datasheet PDF. This datasheet also covers the AFN1330S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design.
  • in SOT-323 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1330S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1330S
Manufacturer Alfa-MOS
File Size 269.44 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1330S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1330KS N-Channel Enhancement Mode MOSFET
AFN1304 N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1330S 60V N-Channel Enhancement Mode MOSFET Features 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.