AFN1330S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1330S Features

* 60V/0.5A , RDS(ON)=7.5Ω@VGS=10V 60V/0.05A , R DS(ON)=7.5Ω@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design

* in SOT-323 package design Application Drivers: Relays, Solenoids, Lamps,

AFN1330S General Description

AFN1330S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN1330S Datasheet (269.44 KB)

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Datasheet Details

Part number:

AFN1330S

Manufacturer:

Alfa-MOS

File Size:

269.44 KB

Description:

N-channel enhancement mode mosfet.

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AFN1330S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1330S Features

AFN1330S General Description

Datasheet Details

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