AFN1602E Datasheet - Alfa-MOS

20V N-Channel Enhancement Mode MOSFET

AFN1602E Features

* 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.0X0.6-3L package design Application Battery Operated Systems Power Supply Converter C

AFN1602E General Description

AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFN1602E Datasheet (759.64 KB)

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Datasheet Details

Part number:

AFN1602E

Manufacturer:

Alfa-MOS

File Size:

759.64 KB

Description:

20v n-channel enhancement mode mosfet.

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AFN1602E 20V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1602E Features

AFN1602E General Description

Datasheet Details

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Description:

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