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AFN1610S - N-Channel Enhancement Mode MOSFET

Download the AFN1610S datasheet PDF. This datasheet also covers the AFN1610S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1610S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 100V/10A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1610S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1610S
Manufacturer Alfa-MOS
File Size 429.18 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1610S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN1610S 100V N-Channel Enhancement Mode MOSFET General Description AFN1610S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features 100V/10A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.