AFN1602E - 20V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1602E, a member of the AFN1602E-Alfa 20V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

Part number	AFN1602E
Manufacturer	Alfa-MOS
File Size	759.64 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	AFN1602E Datasheet
Additional preview pages of the AFN1602E datasheet.

AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.0X0.6-3L package design.

Other Datasheets by Alfa-MOS

Published: Nov 22, 2018 |