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AFN1602E - 20V N-Channel Enhancement Mode MOSFET

Download the AFN1602E datasheet PDF. This datasheet also covers the AFN1602E-Alfa variant, as both devices belong to the same 20v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.0X0.6-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1602E-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1602E
Manufacturer Alfa-MOS
File Size 759.64 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1602E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN1.0X0.6-3L ) AFN1602E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.0X0.