AFN1990S
AFN1990S is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN1990S-Alfa comparator family.
- Part of the AFN1990S-Alfa comparator family.
Alfa-MOS
Technology
60V N-Channel Enhancement Mode MOSFET
General Description
AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Features
60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS
(ON)
TO-263-2L package design
Pin Description ( TO-263-2L )
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part...
