60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin Description ( TO-263-.

Features 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low.

AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN1998S

AFN1912

AFN1912E

AFN1932

AFN1932E

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E