AFN1990S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1990S, a member of the AFN1990S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN1990S
Manufacturer	Alfa-MOS
File Size	690.70 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN1990S Datasheet
Additional preview pages of the AFN1990S datasheet.

AFN1990S Product details

Description

AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin.

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Published: Dec 6, 2018 |