AFN1998S Datasheet | Alfa-MOS

Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET General Description AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-263-2L ) Features 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part...