AFN1998S Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN1998S Features

* 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Pa

AFN1998S General Description

AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN1998S Datasheet (550.60 KB)

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AFN1998S

Manufacturer:

Alfa-MOS

File Size:

550.60 KB

Description:

N-channel enhancement mode mosfet.

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AFN1998S N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN1998S Features

AFN1998S General Description

Datasheet Details

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