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AFN2024S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2024S, a member of the AFN2024S-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2024S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=35mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=45mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFN2024S
Manufacturer Alfa-MOS
File Size 836.45 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2024S Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2024S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN2024S 20V N-Channel Enhancement Mode MOSFET Features 20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=35mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=45mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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