AFN2330 Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2330 Features

* 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3

AFN2330 General Description

AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN2330 Datasheet (546.06 KB)

AFN2330 Datasheet Preview — Preview of AFN2330 PDF

Datasheet Details

Part number:

AFN2330

Manufacturer:

Alfa-MOS

File Size:

546.06 KB

Description:

N-channel enhancement mode mosfet.

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AFN2330 N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2330 Features

AFN2330 General Description

Datasheet Details

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Description:

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