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AFN2336BA - N-Channel MOSFET

This page provides the datasheet information for the AFN2336BA, a member of the AFN2336BA-Alfa N-Channel MOSFET family.

Description

AFN2336BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V/1.5A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet Details

Part number AFN2336BA
Manufacturer Alfa-MOS
File Size 634.11 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN2336BA Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2336BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2336BA 30V N-Channel Enhancement Mode MOSFET Features 30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V/1.5A,RDS(ON)=580mΩ@VGS=4.
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