AFN2336BA Datasheet | Alfa-MOS

Description AFN2336BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V N-Channel Enhancement Mode MOSFET Features 30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V/1.5A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching-Cell Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part...