Datasheet4U Logo Datasheet4U.com

AFN2330A - N-Channel MOSFET

This page provides the datasheet information for the AFN2330A, a member of the AFN2330A-Alfa N-Channel MOSFET family.

Description

AFN2330A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 90V/2.8A,RDS(ON)=200mΩ@VGS=10V 90V/2.0A,RDS(ON)=210mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

📥 Download Datasheet

Datasheet preview – AFN2330A

Datasheet Details

Part number AFN2330A
Manufacturer Alfa-MOS
File Size 677.83 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN2330A Datasheet
Additional preview pages of the AFN2330A datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFN2330A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2330A 90V N-Channel Enhancement Mode MOSFET Features 90V/2.8A,RDS(ON)=200mΩ@VGS=10V 90V/2.0A,RDS(ON)=210mΩ@VGS=4.
Published: |