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AFN2336A - N-Channel MOSFET

This page provides the datasheet information for the AFN2336A, a member of the AFN2336A-Alfa N-Channel MOSFET family.

Description

AFN2336A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/1.8A,RDS(ON)=380mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=480mΩ@VGS=2.5V 30V/0.5A,RDS(ON)=900mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet Details

Part number AFN2336A
Manufacturer Alfa-MOS
File Size 693.74 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN2336A Datasheet
Additional preview pages of the AFN2336A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2336A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2336A 30V N-Channel Enhancement Mode MOSFET Features 30V/1.8A,RDS(ON)=380mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=480mΩ@VGS=2.5V 30V/0.5A,RDS(ON)=900mΩ@VGS=1.
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