AFN2330 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2330, a member of the AFN2330-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

Alfa-MOS

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Datasheet Details

Part number	AFN2330
Manufacturer	Alfa-MOS
File Size	546.06 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2330 Datasheet
Additional preview pages of the AFN2330 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2330 90V N-Channel Enhancement Mode MOSFET Features 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.

Published: Dec 11, 2018 |