AFN2330 Datasheet | Alfa-MOS

Description AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 90V N-Channel Enhancement Mode MOSFET Features 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2330S23RG 30YW SOT-23-3L ϡʳ 30 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~...