AFN3006S
AFN3006S is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN3006S-Alfa comparator family.
- Part of the AFN3006S-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-252-2L )
30V N-Channel Enhancement Mode MOSFET
Features
30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Buck Converter
- High Side
- Low Side
Synchronous Rectifier
- Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G S D
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