AFN3006S mosfet equivalent, n-channel enhancement mode mosfet.
30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Buck Converter − .
Pin Description ( TO-252-2L )
AFN3006S
30V N-Channel Enhancement Mode MOSFET
Features
30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/.
AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download