AFN3302W mosfet equivalent, n-channel mosfet.
* 20V/14A,RDS(ON)=14mΩ@VGS=4.5V
* 20V/12A,RDS(ON)=18mΩ@VGS=2.5V
* 20V/10A,RDS(ON)=26mΩ@VGS=1.8V
* Super high density cell design for extremely
low RDS (ON.
Pin Description ( DFN3X3-8L )
AFN3302W
20V N-Channel Enhancement Mode MOSFET
Features
* 20V/14A,RDS(ON)=14mΩ@VGS=4.
Image gallery
Download