AFN3310W Datasheet | Alfa-MOS

Description AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) 30V N-Channel Enhancement Mode MOSFET Features - 30V/16A,RDS(ON)=17mΩ@VGS=10V - 30V/10A,RDS(ON)=19mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - DFN3X3-8L package design Application - DC/DC Converter - Load Switch - Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFC3326WSFN338RG AFC3326WS YYMMDD DFN3X3-8L ※ YY year code ※ MM month code ※ DD date code ※ AFN3310WFN338RG : 13”Tape & Reel ; Pb-...