AFN3310W Description
AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3310W 30V N-Channel Enhancement Mode MOSFET.
AFN3310W Key Features
- 30V/16A,RDS(ON)=17mΩ@VGS=10V
- 30V/10A,RDS(ON)=19mΩ@VGS=4.5V
- Super high density cell design for extremely
- DFN3X3-8L package design
- DC/DC Converter
- Load Switch
- Power Management in Notebook puter