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AFN3310W - N-Channel MOSFET

Download the AFN3310W datasheet PDF. This datasheet also covers the AFN3310W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/16A,RDS(ON)=17mΩ@VGS=10V.
  • 30V/10A,RDS(ON)=19mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN3X3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN3310W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3310W
Manufacturer Alfa-MOS
File Size 329.67 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3310W Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3310W 30V N-Channel Enhancement Mode MOSFET Features  30V/16A,RDS(ON)=17mΩ@VGS=10V  30V/10A,RDS(ON)=19mΩ@VGS=4.