Datasheet4U Logo Datasheet4U.com

AFN3302W - N-Channel MOSFET

Download the AFN3302W datasheet PDF. This datasheet also covers the AFN3302W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/14A,RDS(ON)=14mΩ@VGS=4.5V.
  • 20V/12A,RDS(ON)=18mΩ@VGS=2.5V.
  • 20V/10A,RDS(ON)=26mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3X3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN3302W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3302W
Manufacturer Alfa-MOS
File Size 365.18 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3302W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFN2308AS23RG N-Channel 60V MOSFET VBsemi
AFND1208U1 512Mbit (64M x 8-Bit)NAND FLASH ATO
AFND1G08U3 1G-bit NAND FLASH ATO

Other Datasheets by Alfa-MOS

Part Number Description
AFN3306WS N-Channel MOSFET
AFN3309WS N-Channel MOSFET
AFN3310W N-Channel MOSFET
AFN3316W N-Channel MOSFET
AFN3334WS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3302W 20V N-Channel Enhancement Mode MOSFET Features  20V/14A,RDS(ON)=14mΩ@VGS=4.5V  20V/12A,RDS(ON)=18mΩ@VGS=2.5V  20V/10A,RDS(ON)=26mΩ@VGS=1.