AFN3316W Datasheet | Alfa-MOS

Description AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) 60V N-Channel Enhancement Mode MOSFET Features - 60V/8A,RDS(ON)=140mΩ@VGS=10V - 60V/6A,RDS(ON)=148mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - DFN3X3-8L package design Application - DC/DC Converter - Load Switch - Power Management in Notebook puter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN3316WSFN338RG AFN3316WS YYMMDD DFN3X3-8L ※ YY year code ※ MM month code ※ DD date code ※ AFN3316WFN338RG : 13”Tape & Reel ; Pb-...