AFN3316W Description
AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3316W 60V N-Channel Enhancement Mode MOSFET.
AFN3316W Key Features
- 60V/8A,RDS(ON)=140mΩ@VGS=10V
- 60V/6A,RDS(ON)=148mΩ@VGS=4.5V
- Super high density cell design for extremely
- DFN3X3-8L package design
- DC/DC Converter
- Load Switch
- Power Management in Notebook puter