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AFN3306WS - N-Channel MOSFET

This page provides the datasheet information for the AFN3306WS, a member of the AFN3306WS-Alfa N-Channel MOSFET family.

Product Overview

Alfa-MOS

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AFN3306WS N-Channel MOSFET by Alfa-MOS - Datasheet Preview — Datasheet preview – AFN3306WS

Datasheet Details

Part number	AFN3306WS
Manufacturer	Alfa-MOS
File Size	470.95 KB
Description	N-Channel MOSFET
Datasheet	AFN3306WS Datasheet
Additional preview pages of the AFN3306WS datasheet.

AFN3306WS Product details

Description

AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

30V/20A,RDS(ON)=4.0mΩ@VGS=10V.
30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN3X3-8L package design.

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Published: Nov 24, 2018 |