Alfa-MOS AFN3309WS
N-Channel MOSFET
| Part No. | AFN3309WS |
|---|---|
| Datasheet | AFN3309WS Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( DFN3X3-8L ) AFN3309WS 30V N-Channel Enhancement Mode MOSFETFEATURES
● 30V/20A,RDS(ON)=4.5mΩ@VGS=10V● 30V/15A,RDS(ON)=6.8mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● DFN3X3-8L package design Application
● DC-DC Converter
● POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D
DESCRIPTION
Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package Unit AFN3309WSFN338RG 3309WS DFN3X3-8L Tape & Reel
