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Alfa-MOS

AFN3306WS Datasheet Preview

AFN3306WS Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN3306WS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer and other
battery powered circuits, and low in-line power
loss are needed in commercial industrial
surface mount applications.
Pin Description ( DFN3X3-8L )
AFN3306WS
30V N-Channel
Enhancement Mode MOSFET
Features
30V/20A,RDS(ON)=4.0mΩ@VGS=10V
30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
DFN3X3-8L package design
Application
DC-DC Converter
POL
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
Unit
AFN3306WSFN338RG
3306WS
DFN3X3-8L
Tape & Reel
YY year code
MM month code
DD date code
AFN3306WSFN338RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free
Quantity
5000 EA
©Alfa-MOS Technology Corp.
Rev.C Mar. 2012
www.alfa-mos.com
Page 1




Alfa-MOS

AFN3306WS Datasheet Preview

AFN3306WS Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN3306WS
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
PDSM
TJ
TSTG
RθJA
Typical
30
±20
40
30
80
40
36
18
3
2
150
-55/150
120
Unit
V
V
A
A
A
W
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.C Mar. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=10V,ID=20A
VGS=4.5V,ID=15A
VDS=15V,ID=10A
IS=10A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID15A
VDS=25V,VGS=0V
f=1MHz
VDD=15V,RL=0.3Ω
ID15A,VGEN=10V
RG=2.5Ω
Min. Typ Max. Unit
30
V
1.0 2.0
±100
1
10
nA
uA
15 A
2.5
4.2
4.0
5.8
mΩ
24 S
0.8 1.3 V
50 70
10 nC
8
2800
550 pF
300
12 20
12 20 ns
30 45
10 20
www.alfa-mos.com
Page 2



Part Number AFN3306WS
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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