AFN3306WS
AFN3306WS is N-Channel MOSFET manufactured by Alfa-MOS.
- Part of the AFN3306WS-Alfa comparator family.
- Part of the AFN3306WS-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
30V N-Channel Enhancement Mode MOSFET
Features
- 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
- 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- DFN3X3-8L...
