AFN3306WS mosfet equivalent, n-channel mosfet.
* 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
* 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistance a.
Pin Description ( DFN3X3-8L )
AFN3306WS
30V N-Channel Enhancement Mode MOSFET
Features
* 30V/20A,RDS(ON)=4.0mΩ@VGS.
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