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AFN3309WS - N-Channel MOSFET

This page provides the datasheet information for the AFN3309WS, a member of the AFN3309WS-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 30V/20A,RDS(ON)=4.5mΩ@VGS=10V.
  • 30V/15A,RDS(ON)=6.8mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3X3-8L package design.

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Datasheet preview – AFN3309WS

Datasheet Details

Part number AFN3309WS
Manufacturer Alfa-MOS
File Size 326.40 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3309WS Datasheet
Additional preview pages of the AFN3309WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3309WS 30V N-Channel Enhancement Mode MOSFET Features  30V/20A,RDS(ON)=4.5mΩ@VGS=10V  30V/15A,RDS(ON)=6.8mΩ@VGS=4.
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