AFN3310W mosfet equivalent, n-channel mosfet.
* 30V/16A,RDS(ON)=17mΩ@VGS=10V
* 30V/10A,RDS(ON)=19mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* DFN3X3-8L package design
App.
Pin Description ( DFN3X3-8L )
AFN3310W
30V N-Channel Enhancement Mode MOSFET
Features
* 30V/16A,RDS(ON)=17mΩ@VGS=1.
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