AFN3316W mosfet equivalent, n-channel mosfet.
* 60V/8A,RDS(ON)=140mΩ@VGS=10V
* 60V/6A,RDS(ON)=148mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* DFN3X3-8L package design
App.
Pin Description ( DFN3X3-8L )
AFN3316W
60V N-Channel Enhancement Mode MOSFET
Features
* 60V/8A,RDS(ON)=140mΩ@VGS=1.
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