AFN3422W mosfet equivalent, n-channel mosfet.
100V/3.0A,RDS(ON)=310mΩ@VGS=10V 100V/2.0A,RDS(ON)=320mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.
Pin Description ( TSOP-6 )
AFN3422W
100V N-Channel Enhancement Mode MOSFET
Features
100V/3.0A,RDS(ON)=310mΩ@VGS=10V 10.
AFN3422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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