AFN3430W Datasheet, Alfa-MOS

90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application LED Display DC.

Pin Description ( TSOP-6 ) AFN3430W 90V N-Channel Enhancement Mode MOSFET Features 90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/.

AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.