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AFN3430W - N-Channel MOSFET

This page provides the datasheet information for the AFN3430W, a member of the AFN3430W-Alfa N-Channel MOSFET family.

Description

AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design.

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Datasheet Details

Part number AFN3430W
Manufacturer Alfa-MOS
File Size 560.26 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3430W Datasheet
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Alfa-MOS Technology General Description AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN3430W 90V N-Channel Enhancement Mode MOSFET Features 90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Ordering No.
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