AFN3456S mosfet equivalent, n-channel mosfet.
30V/5.4A,RDS(ON)=40mΩ@VGS=10V 30V/4.8A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOT-23-6L package design
Application
Power Manage.
Pin Description ( TSOT-23-6L )
AFN3456S
30V N-Channel Enhancement Mode MOSFET
Features
30V/5.4A,RDS(ON)=40mΩ@VGS=10V 3.
AFN3456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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