AFN3458BW mosfet equivalent, n-channel mosfet.
60V/5.6A,RDS(ON)=135mΩ@VGS=10V 60V/3.8A,RDS(ON)=145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .
Pin Description ( TSOP-6 )
AFN3458BW
60V N-Channel Enhancement Mode MOSFET
Features
60V/5.6A,RDS(ON)=135mΩ@VGS=10V 60V.
AFN3458BW, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.
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