AFN3606S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN3606S, a member of the AFN3606S-Alfa N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN3606S
Manufacturer	Alfa-MOS
File Size	600.82 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN3606S Datasheet
Additional preview pages of the AFN3606S datasheet.

AFN3606S Product details

Description

AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30V/30A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Published: Dec 6, 2018 |