AFN3606S mosfet equivalent, n-channel enhancement mode mosfet.
30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30V/30A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converte.
Pin Description ( TO-220-3L )
AFN3606S
30V N-Channel Enhancement Mode MOSFET
Features
30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30.
AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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