Datasheet4U Logo Datasheet4U.com

AFN3630 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN3630, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-220-3L ) AFN3630 30V N-Channel Enhancement Mode MOSFET

Key Features

  • 30V/20A,RDS(ON)=30mΩ@VGS=10V 30V/15A,RDS(ON)=38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

AFN3630 Distributor