AFN3606S Description
AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN3606S 30V N-Channel Enhancement Mode MOSFET.
AFN3606S Key Features
- High Side
- Low Side
- Secondary Rectifier