AFN3609S
AFN3609S is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN3609S-Alfa comparator family.
- Part of the AFN3609S-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( TO-220-3L )
30V N-Channel Enhancement Mode MOSFET
Features
30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converter
- High Side
- Low Side
Synchronous Rectifier
- Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G D S
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