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AFN3684S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN3684S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-220-3L ) AFN3684S 30V N-Channel Enhancement Mode MOSFET

Key Features

  • 30V/30A,RDS(ON)=9mΩ@VGS=10V 30V/18A,RDS(ON)=13mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

AFN3684S Distributor