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Alfa-MOS

AFN3684S Datasheet Preview

AFN3684S Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN3684S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-220-3L )
AFN3684S
30V N-Channel
Enhancement Mode MOSFET
Features
30V/30A,RDS(ON)=9m@VGS=10V
30V/18A,RDS(ON)=13m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
TO-220-3L package design
Application
Buck Converter
− Low Side
Synchronous Rectifier
− Secondary Rectifier
Pin Define
Pin
1
2
3
Symbol
G
D
S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3684S
AFN3684ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN3684ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Description
Gate
Drain
Source
Unit
Tube
Quantity
50 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN3684S Datasheet Preview

AFN3684S Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN3684S
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
30
18
40
9.0
75
150
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=30A
VGS=4.5V,ID=18A
VDS=15V,ID=10A
IS=12A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID10A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=1.5
ID10A,VGEN=10V
RG=1
Min. Typ Max. Unit
30 V
1.0 2.0
±100 nA
1
10 uA
15 A
7.5
11
9
13
m
24 S
0.8 1.3 V
10 15
3.8 nC
3.2
950
200 pF
85
10 20
10
20
20
35
ns
10 20
www.alfa-mos.com
Page 2



Part Number AFN3684S
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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