AFN4804 mosfet equivalent, n-channel enhancement mode mosfet.
40V/16A,RDS(ON)= 48mΩ@VGS=10V 40V/10A,RDS(ON)= 70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backlight Inv.
Pin Description ( TO-252-2L )
AFN4804
40V N-Channel Enhancement Mode MOSFET
Features
40V/16A,RDS(ON)= 48mΩ@VGS=10V 40V.
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