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AFN4874WS - 60V N-Channel MOSFET

This page provides the datasheet information for the AFN4874WS, a member of the AFN4874WS-Alfa 60V N-Channel MOSFET family.

Description

AFN4874WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=12A,RDS(ON)= 8mΩ@VGS=10V.
  • ID=10A,RDS(ON)= 9mΩ@VGS=6.0V.
  • ID= 8A,RDS(ON)=10mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOP-8P package design.

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Datasheet Details

Part number AFN4874WS
Manufacturer Alfa-MOS
File Size 346.56 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AFN4874WS Datasheet
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Alfa-MOS Technology General Description AFN4874WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4874WS 60V N-Channel Enhancement Mode MOSFET Features  ID=12A,RDS(ON)= 8mΩ@VGS=10V  ID=10A,RDS(ON)= 9mΩ@VGS=6.0V  ID= 8A,RDS(ON)=10mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems.
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