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Alfa-MOS

AFN4998W Datasheet Preview

AFN4998W Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN4998W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOP-8P )
AFN4998W
100V N-Channel
Enhancement Mode MOSFET
Features
100V/5.6A,RDS(ON)=120m@VGS=10V
100V/4.2A,RDS(ON)=130m@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
SOP-8P package design
Application
Motor and Load Control
AD/DC Inverter Systems.
Power Management in White LED System
Pin Define
Pin
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4998WS8RG
4998W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4998WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Aug. 2012
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4998W Datasheet Preview

AFN4998W Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4998W
100V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
100
±20
5.4
4.2
30
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Aug. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=100V,VGS=0V
VDS=80V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=5.6A
VGS=4.5V,ID=4.2A
VDS=15V,ID=5.3A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=5V
ID5A
VDS=50V,VGS=0V
f=1MHz
VDD=50V,RL=12.5
ID5.0A,VGEN=10V
RG=1.0
Min. Typ Max. Unit
100 V
1.0 2.5
±100 nA
1
5 uA
30 A
110
114
120
130
m
24 S
0.8 1.2 V
10 15
4.0 nC
5.0
550
80 pF
50
10 20
10
15
20
25
ns
10 25
www.alfa-mos.com
Page 2



Part Number AFN4998W
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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