AFN4998W Datasheet - Alfa-MOS

N-Channel MOSFET

AFN4998W Features

* 100V/5.6A,RDS(ON)=120mΩ@VGS=10V 100V/4.2A,RDS(ON)=130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2

AFN4998W General Description

AFN4998W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4998W Datasheet (582.60 KB)

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Datasheet Details

Part number:

AFN4998W

Manufacturer:

Alfa-MOS

File Size:

582.60 KB

Description:

N-channel mosfet.

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AFN4998W N-Channel MOSFET Alfa-MOS

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AFN4998W Features

AFN4998W General Description

Datasheet Details

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AFN4998W Distributor