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AFN4996W - N-Channel MOSFET

Download the AFN4996W datasheet PDF. This datasheet also covers the AFN4996W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN4996W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 90V/7.6A,RDS(ON)=68mΩ@VGS=10V 90V/6.8A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN4996W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4996W
Manufacturer Alfa-MOS
File Size 574.28 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4996W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN4996W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4996W 90V N-Channel Enhancement Mode MOSFET Features 90V/7.6A,RDS(ON)=68mΩ@VGS=10V 90V/6.8A,RDS(ON)=75mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.